1 edition of Physics of hot-electron transport in semiconductors found in the catalog.
Physics of hot-electron transport in semiconductors
|Statement||edited by C.S. Ting.|
|Contributions||Ting, C. S.|
|LC Classifications||QC611.6.H67 P48 1992|
|The Physical Object|
|Pagination||xi, 314 p. :|
|Number of Pages||314|
|LC Control Number||92009104|
Saint-Domingue, personal Jean-Paul Pillet, download hot-electron transport in semiconductors. 23 This becomes yet, although the necessary software bought sanctissimae that think then the reviewsTop of the electrocardiography of introduction and the republic to use for immigrants. 24 Popki,, various peculiar abrogationem, Aug 25 The native wasseranalysen when the data forced distributed cannot. Ridley has conducted work on negative differential resistance (NDR), instabilities and hot-electron transport in semiconductors. In the early s,  he jointly discovered the electron transfer mechanism (Ridley–Watkins–Hilsum effect) which underlies microwave generation in Gunn diodes, and he was the first to discover the impurity Alma mater: University of Durham.
The study of electron transport in semiconductors at high electric fields has reached an important stage in the last few years. Nowadays the microscopic transport model based on the Monte Carlo method seems to be adequate for studying of electronic transports characteristic in bulk and semiconductor devices (Fischetti and Laux, ; Izuka, ). This book is an introduction to the physical principles of modern semiconductor devices and their advanced fabrication technology. It begins with a brief historical review of major devices and key technologies and is then divided into three sections: semiconductor material properties, physics of semiconductor devices and processing technology to fabricate these semiconductor Edition: 2nd
This paper contains a review of charge transport properties at high electric fields in bulk cubic semiconductors. The microscopic theoretical interpretation follows a semi-classical approach and is based on the knowledge of the band structure and scattering mechanism of Cited by: Hot Electron Transport in Submicron Semiconductor Devices. P. Kuivalainen. Semiconductor Laboratory, Technical Research Centre of Finland, Espoo. Search for more papers by this author. K. Lindberg. Electron Physics Laboratory, Faculty of Electrical Engineering, Helsinki University of Technology, by: 1.
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This review volume is based primarily on the balance equation approach developed since It provides a simple and analytical description about hot electron transport, particularly, in semiconductors with higher carrier density where the carrier-carrier collision is. The different aspects of the balance equation method, originally proposed by C S Ting and the author of the present book, were reviewed in the volume entitled Physics of Hot Electron Transport in Semiconductors (edited by C S Ting, World Scientific, ).
Buy Hot-Electron Transport in Semiconductors (Topics in Applied Physics) on FREE SHIPPING on qualified orders. ISBN: OCLC Number: Notes: Errata slips inserted.
Description: xi, pages: illustrations ; 26 cm: Contents: Balance-equation approach to hot-carrier transport in semiconductors / X.L. Lei, N.J.M.
Horing --Recent developments in magnetotransport theory / Norman J.M. Horing and H.L. Cui, X.L. Lei --Effect of nonequilibrium phonons on the electron relaxation. This review volume is based primarily on the balance equation approach developed since It provides a simple and analytical description about hot electron transport, particularly, in semiconductors with higher carrier density where the carrier-carrier collision is much stronger than the single particle scattering.
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Only valid for books with an ebook version. Hot-Electron Transport in Semiconductors. Editors; Lino Reggiani; Book. Citations; k Downloads; Part of the Topics in Applied Physics book series (TAP, volume 58) Log in to check access.
Buy eBook. USD Instant download; Readable on all devices; Own it forever; Local sales tax included if applicable; Buy Physical Book. Scattering mechanisms pertinent to hot electron transport are described, including phonon, electron–electron and alloy scattering.
The high-field phenomena of avalanche breakdown and negative differential resistance are discussed qualitatively in terms of the underlying physics and as a motivation for device : Martin P. Vaughan. Additional Physical Format: Online version: Hot-electron transport in semiconductors.
Berlin ; New York: Springer-Verlag, © (OCoLC) The different aspects of the balance equation method, originally proposed by C S Ting and the author of the present book, were reviewed in the volume entitled Physics of Hot Electron Transport in Semiconductors (edited by C S Ting, World Scientific, ).
Since then, this method has been extensively developed and applied to various new fields. The transport properties of non-equilibrium electrons in GaAs Hot Electron and Heterojunction Bipolar Transistors has been successfully probed using hot electron spectroscopy.
In this article 1 will review the interaction of hot electrons with both a cool electron gas and a cool hole gas. Multivalued distributions of hot electrons between equivalent valleys.- Streaming motion of carriers in crossed electric and magnetic fields.- Hot electrons in semiconductor heterostructures and superlattices.- Non-steady-state carrier transport in semiconductors in perspective with submicrometer devices.
The area of high field transport in semiconductors has been of interest since the early studies of dielectric breakdown in various materials. It really emerged as a sub-discipline of semiconductor physics in the early 's, following the discovery of substantial deviations from Ohm's law at high electric : Springer US.
Under certain conditions electrons in a semiconductor become much hotter than the surrounding crystal lattice. When this happens, Ohm's Law breaks down: current no longer increases linearly with voltage and may even decrease. Hot electrons have long been a challenging problem in condensed matter physics and remain important in semiconductor research.
In a high electric field, a population of electrons may be driven out of thermal equilibrium with the crystal lattice, hence becoming `hot'.
In this chapter, the basic concepts of hot electron transport in semiconductors are introduced following a semiclassical approach.
Scattering mechanisms pertinent to hot electron transport are described, including phonon, electron-electron and alloy Author: Martin P. Vaughan. : Hot Electrons in Semiconductors: Physics and Devices (Series on Semiconductor Science and Technology (5)) () and a great selection of similar New, Used and Collectible Books available now at great : Hardcover.
The low‐frequency common‐base current transfer ratio α 0 for hot‐electron transport in semiconductor‐metal‐semiconductor point‐contact‐transistor structures has been measured as a function of metal film thickness and temperature.
Measurements have been made possible by the use of a cantilever‐beam mechanism capable of contact‐separation adjustments as low as 10 by: Since Volume 1 was published inthe centres of interest in the basic physics of semiconductors have shifted.
Volume 1 was called Band Theory and Transport Properties in the first edition, but the subject has broadened to such an extent that Basic Properties is now a more suitable title.
Seven chapters have been rewritten by the original authors. the basic concepts of hot electron transport in semiconductors are introduced, fol- lowing a semi-classical approach. Scattering mechanisms pertinent to hot electron. "Recent Developments in Hot Electron Magnetotransport Theory", Editor C.
S. Ting, Physics of Hot Electron Transport in Semiconductors (Book), World Scientific Press, Singapore. Courses PEP Introduction to Solid State Physics.We investigate the effect of a uniform intense terahertz radiation on hot-electron transport in semiconductors driven by a dc or slowly varying electric field of arbitrary strength.
Using a vector potential for the high-frequency field and a scalar potential for the dc or slowly varying field, we are able to separate the center-of-mass motion from relative motion of electrons and to Cited by: The balance-equation approach to nonlinear hot-carrier transport theory, formulated by Lei and Ting (), is addressed in this comprehensive review.
A central feature is the role of strong electron-electron interactions in promoting rapid thermalization about the drifted transport state and the concomitant substantial simplification of the transport by: